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HfAlON films were fabricated using the reactive ablation of a ceramic (HfO 2 ) 0.5 (Al 2 O 3 ) 0.5 (i.e., HfAlO) target in N 2 ambient by pulsed laser deposition (PLD) technique. HfAlON films were deposited directly on n-Si (100) substrates and Pt-coated silicon substrates, respectively, at 500 °C in a 20Pa-N 2 ambient and rapid thermal annealed...
Yttria-stabilized zirconia (YSZ) films were deposited on Pt-coated silicon substrates and directly on n-type Si substrates, respectively, by pulsed laser deposition (PLD) technique using a YSZ (5 mol% Y 2 O 3 -stabilized ZrO 2 ) ceramic target. The YSZ films were deposited in 1.5x10 -2 Pa O 2 ambient at 300 o C and in situ post-annealed at 400 ...
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