The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The fabrication of 1200V SiC MOSFET with developed nitrided gate oxide and self-aligned channel technology are reported. Post-oxidation annealing in nitrogen-contained ambient can effectively passivate defects at the SiC/SiO2 interface which is beneficial for the mobility improvement in SiC MOSFETs. The process of nitridation begins from the conduction band and extends to the mid-band-gap gradually...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.