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Si3N4 films are usually used as a protecting layer of a poly silicon gate during the etching of a contact hole. An increase in the etch rates of Si3N4 at its curved surface lowers the etch selectivity of SiO2 with respect to Si3N4 [1, 2], resulting in device failure. Therefore, it is important to control the angular dependence of Si3N4 etch rates and SiO2-to-Si3N4 etch selectivity. In this work, the...
A reduction in the feature size of integrated circuits (ICs) is critical to achieve dynamic random access memory (DRAM) devices with high density. Optical lithography is widely used to transfer patterns from the mask to the substrate. Due to physical limitations of optical lithography, efforts have been made to extend lithography limits such as double patterning technology [1]. In this work, a novel...
Atomic scale etching of poly-Si, which can give atomic scale accuracy, was investigated in inductively coupled Ar and He plasmas. Atomic scale etching used a cyclic operation of gas adsorption and ion beam irradiation, which is the same concept as atomic layer etching of single crystal substrates. Cl2 was used as etchant gas, and ions generated from inductively coupled Ar and He plasmas were used...
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