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The dependence of Si3N4 etching on ion‐incident angles is investigated at various CH2F2 flow rates in C4F6/CH2F2/O2/Ar plasmas. The normalized etch yield (NEY) curves for Si3N4 imply that physical sputtering is a major contributor to Si3N4 etching. An increase in the amount of CH2F2 in the plasma produces thicker and more etch‐resistant fluorocarbon films. Systematic analyses on deposition and etching...
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