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The MBE-grown GaAs(001) surface exhibits various surface phases depending on the surface temperature and As/Ga flux ratio during the growth. Using scanning tunneling microscopy, reflection high energy electron diffraction and theoretical simulations, we have carried out a systematic study of various phases from As-rich c(4×4), 2×4 to Ga-rich 4×2 and 4×6, utilizing migration-enhanced epitaxy. Based...
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