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High-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs) requires efficient heat removal through the substrate. GaN composite substrates, including the high-thermal-conductivity diamond, are promising, but high thermal resistances at the interfaces between the GaN and diamond can offset the benefit of a diamond substrate. We report on measurements of thermal resistances at GaN–diamond...
Due to their high thermal conductivity, diamond substrates are seen as a way to minimize the thermal resistance present in High Electron Mobility Transistor (HEMT) structures based on GaN. Single-crystal AlN transition layers facilitate the growth of high quality GaN on diamond, but such layers may increase the total thermal resistance of the composite substrate. This manuscript measures the thermal...
High-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs) requires efficient heat removal through the substrate. GaN composite substrates including high-thermal-conductivity diamond are promising, but high thermal resistances at the interfaces between the GaN and diamond can offset the benefit of a diamond substrate. We report on measurements of the thermal resistances at the GaN-diamond...
Thermal conduction strongly influences the programming energy and speed in phase-change-memory devices. The thermal conductivity of the crystalline phase of can be strongly anisotropic due to phase impurities at grain boundaries. This letter models this effect using effective medium arguments, lends further support to the hypothesis that phase impurities are...
We report the thickness and phase dependent thermal properties of Ge2Sb2Te5 (GST) films using electrical Joule heating thermometry (3ω method) and validate the data with optical thermometry. The intrinsic thermal conductivity of GST increases from 0.26 W/mK for the amorphous phase to 0.57 W/mK for the crystalline phase. The thermal boundary resistance between GST and Si3N4 films decreases from 134...
This work measures both the out-of-plane and the in-plane thermal conductivities of Ge2Sb2Te5 (GST) films in the amorphous (a), face-centered-cubic (c), and hexagonal close packed (h) phases using the 3?? method. The out-of-plane thermal conductivity, kz, is first measured from a wide heater. The data include 0.17 W/mK for a-GST, 0.55 W/mK and 1.01 W/mK for c-GST of annealing temperature 150??C and...
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