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We fabricated the QD-SOA, which was composed of 20-layer-stacked InAs quantum dots structure with the strain-compensation technique grown by MBE, and evaluated the fundamental gain characteristics and ultra-fast optical pulse response for all-optical logic gate devices at a wavelength range around 1550nm. For the device length of 1650 μm, the maximum gain of 34.7 dB was obtained for TE mode. And we...
We simulated gain characteristics of QD-SOA with 20-layer-stacked QDs structure grown on an InP(311)B substrate. Taking piezoelectric effect in the QDs into account, the results fitted to the obtained experimental data well.
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