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Nitrogen- and boron-doped amorphous carbon layers (ACLs) were grown by plasma- enhanced chemical vapor deposition (PECVD) on a Si substrate and characterized by Raman and X-ray photoelectron spectroscopy (XPS) techniques. Increasing doping levels resulted in a shift in the Raman G-peak of the doped ALCs, indicating a change in bond lengths upon doping. The XPS N1s and B1s spectra revealed the presence...
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