The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A robust low-k diffusion barrier, i.e., advanced SiC(O) (A-SiC(O), k = 3.5), was developed to attain a keff of less than 2.7 for reliable ultra-low-k/Cu integration for 45-nm node technology and beyond. A new precursor that requires that requires no oxidizing agent was introduced for deposition to obtain higher film density while maintaining the k-value. The A-SiC(O) film has a low leakage current...
To reduce the effective k-value to less than 2.7 for the 45-nm node, direct CMP of a porous SiOC film (k = 2.3-2.6) without a protective cap layer was applied to Cu damascene fabrication by using a damage-less sacrificial film process. The key is controlling the molecular size of surfactants in the CMP slurries or cleaning chemicals, which are related to the moisture uptake and watermark generation...
The mechanism of UV and EB cure processes for porous low-k SiCOH materials was investigated by using experimental results obtained using PECVD and SOD films as well as simulated results. Both UV and EB cures induced dielectric constant change and Young's modulus improvement because Si-OH elimination (moisture removal) and cross-link formation occurred during film shrinkage. Excess UV curing, however,...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.