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In this study, a phase-change memory device was fabricated and the origin of device failure mode was examined using transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). Ge 2 Sb 2 Te 5 (GST) was used as the active phase-change material in the memory device and the active pore size was designed to be 0.5μm. After the programming signals of more...
We evaluated the electrical properties and change of nanostructure of Cu doped SiO2 and Ge2Sb2Te5 (GST) thin film under electrical stressing. Specialized scanning tunneling microscopy (STM)-transmission electron microscope (TEM) holder, which allows us to do the electrical characterization and observation of in-situ nano-structural evolution simultaneously, used as a approach method to confirm the...
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