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The detection of formaldehyde at a very low concentration is a significant research topic, because of its harmful impact on human health. In this current study, we have fabricated a hierarchical structure by the reasonable assembly of single-crystalline Co3O4 nanoparticles. A hollow morphology using sacrificial ZnO spheres could make a three-dimensional conducting network in a solid state. The resulting...
Terahertz time-domain spectroscopy was used as a nondestructive and a noncontact optical probe to investigate the material properties and high frequency carrier dynamics of undoped and Al-doped ZnO nanowires (NWs). The frequency dependent refractive index was first determined through effective medium theory and numerical iteration process applied to the detected terahertz signals transmitted through...
Zinc oxide (ZnO) is a major wide band gap semiconductor material for optoelectronic and photonic devices because of its exceptional optical properties, arising from the combination of a wide band gap (~3.37 eV) and a large exciton binding energy (~60 meV) [1]. One-dimensional ZnO nanostructures, such as nanowires and nanorods, further exhibit unique properties that make...
In this work, we report the growth and nanoscale characterization of single crystal zinc oxide nanowires synthesized by thermal chemical vapor deposition. Scanning electron microscopy, high-resolution transmission electron microscopy, x-ray diffraction, photoluminescence and Raman spectroscopy confirmed the high quality nature of the materials. To analyze their electrical properties, terahertz time...
We report hybrid inorganic/organic photovoltaic heterojunction structures based on quantum dot functionalized nanowires. Single crystalline ZnO nanowires were first functionalized with InP/ZnS core-shell quantum dots and then embedded in a conductive polymer hole matrix to achieve a low cost, high efficiency device structure. The device structures were characterized by scanning electron microscopy,...
Optical properties of 530 nm strain-compensated InGaN/InGaN/ZnO quantum well (QW) light-emitting diodes (LEDs) using a ZnO substrate are investigated using the multiband effective mass theory. These results are compared with those of conventional InGaN/GaN QW LEDs using a GaN substrate. A strain-compensated QW structure is found to have much larger spontaneous emission than a InGaN/GaN QW structure...
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