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In recent years, ytterbium-ion (Yb)-doped materials have been recognized having attractive potential for laserdiode (LD) pumped solid state lasers. One of the features of the Yb-doped materials is that it can incorporate very high concentrations of the Yb-ions with low concentration quenching. Highly laser ion-doped materials with short absorption length permit the use of thin gain media with high...
A systematic study of the intense terahertz (THz) emission from InAs thin films grown on a GaAs substrate was performed by varying the V/III ratio of the InAs. The emission intensity increased as the film thickness increased up to 1 μm and became stronger than that from a p-type InAs substrate for sample of lower V/III ratio. The mechanism of the enhanced THz emission is discussed, and a possible...
Efficient broadband spectrum oscillation was obtained directly from a laser-diode-pumped Kerr-lens mode-locked Yb:YAG laser with intracavity nonlinear media. The spectrum was expanded to around 1040 nm to 1070 nm. The spectrum is much broader than the fluorescence spectrum at 1050 nm.
One-hundred-ten-fs and 72-fs pulse-widths were obtained directly from a mode-locked Yb:YAG laser with SESAM and without SESAM, respectively. The laser-spectrum-center and the fluorescence-center were almost same. The oscillation-spectra were much broader than the fluorescence.
Highly efficient cavity dumping of Yb:YAG laser has been realized at room temperature with the optical to optical conversion efficiency of 72% for the absorbed pump power.
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