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This study examined the origin of bistability in polyfluorene (PFO)-based organic bistable memory devices (OBDs) by changing the bulk properties of PFO and metal electrodes. Two different PFOs with and without internal trap sites and two Al and Au electrodes were used. Bistability was induced in all devices when Al was deposited on PFO. On the other hand, bistable switching was observed only in the...
Organic bistable memory devices (OBDs) with MoO 3 as a nanocrystal inside organic layer were developed and bistability of MoO 3 based OBDs was investigated. High on/off ratio over 200 was obtained at a low reading voltage of 1V. MoO 3 OBDs could be electrically switched between high conductance state and low conductance state over more than 100 cycles and space charge limited...
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