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The performance of a Unidirectional Normally-on 3C-SiC/Si power MESFET is analyzed. The electrical characteristics are simulated using the industry standard Silvaco Atlas simulator. Thermal analysis and self-heating are investigated using COMSOL, the most advanced Multiphysics simulator. The electrical analysis shows that the drain current of this device is 100% higher than a lateral device with the...
In this paper we evaluated the electric field and self-heating temperature of 3D 3C-SiC/Si MOSFETs. Using the numerical analysis simulator Silvaco Atlas, this device was found to have a critical electric field of 6.68×106 V/cm at a breakdown voltage close to 312V. Using COMSOL program, self-heating effect was investigated, and found that the temperature reached 866K at VDS=312V and VGS=5V.
An optimized power system requires the integration of more than one technology. In this paper we present a 3D 3C-SiC/Si MOSFET, where high performance power devices can be integrated with low cost Si technology. Using the numerical analysis simulator Silvaco Atlas to simulate the device performance, it was found that these devices can provide double the current while occupying less than 33% of the...
A one-directional 3D normally-on SiC MESFET, suitable for safe multi-KW/cm2 power applications, is designed and analyzed using the numerical analysis simulator, Silvaco Atlas. The analyses show that the drain current is a 100% higher than a surface device with the same dimensions, while occupying less than 33% of the area. At gate voltage of 0V, the drain current reaches 600 mA/mm with a breakdown...
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