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The resistance switching mechanism and the electrical conduction of thick Cu/ZnO/Cu/ZnO/Cu structures were investigated for various ZnO thicknesses (40, 80, 160, and 320 nm) when the thickness of the middle Cu layer was 2 nm. The ZnO films had a microstructure with columnar grains normal to the substrate. The switching voltages (VSET and VRESET) varied with the thickness of the ZnO layer. A symmetric...
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