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In this paper, the application of a novel combined high temperature thermal oxidation and annealing process to mesa-isolated epitaxial-anode 4H-SiC PiN diodes with thick (\(110~\mu \) m ) drift regions is presented, the aim of which was to increase the carrier lifetime in the 4H-SiC. Diodes were fabricated using 4H-SiC material having undergone this process, which consisted of a thermal oxidation...
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