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The ordinary dielectric function (DF) is presented for high quality Al‐rich Al1−xInxN alloy films pseudomorphically grown on GaN in the photon energy range 1–18 eV determined by spectroscopic ellipsometry at room temperature (synchrotron radiation – BESSY II). The (0001)‐oriented layers with In content of 14.3 and 15.4% were grown by metal‐organic vapour phase epitaxy on thick GaN buffers with sapphire...
We report on the fabrication and characterization of AlGaN/GaN metal–insulator–semiconductor heterostructure field effect transistors (MISHFETs) using HfO2 and Al2O3 as gate dielectric, deposited by atomic layer deposition (ALD). Improved device performance has been observed for all MISHFET devices as compared to the reference HFET. The additional dielectric layer underneath the gate metallization...
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