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The piezoresistive pressure sensor has been used to measure the dynamic pressure as well as in high temperature environment. In this paper, a novel TSV 3D packaged pressure sensor is proposed for high temperature environment and dynamic measurement. The pressure sensors and the silicon carrier with TSV are flip chip bonded using Au/Sn eutectic for hermetic encapsulation. In order to reduce the stress...
As multiple layers of planar device are stacked to alleviate signal delay problem and reduce chip area, Through silicon via (TSV) is introduced to replace the large number of long interconnects needed in previous 2D structure. However, the thermal-mechanical reliability problems of TSVs, such as interfacial delamination, via cracking and so on, have become a serious reliability concern. In this paper,...
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