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A monolithic microwave integrated circuit (MMIC) process based on an in-house SiC MESFET technology has been developed. The process uses microstrip technology, and a complete set of passive components, including MIM capacitors, spiral inductors, thin-film resistors, and via-holes, has been developed. The potential of the process is demonstrated by an 8-W power amplifier at 3 GHz, a high-linearity...
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