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The electrical properties of GaAs/GaAs junctions fabricated by using surface-activated bonding (SAB) were investigated. We extracted the potential barrier heights at 300-°C-annealed GaAs/GaAs interfaces from their current-voltage characteristics measured at varied ambient temperatures and estimated the energy of charge neutral level ECNL and the density of interface states Dit.
Effects of annealing on GaAs/Si bonding interfaces of III-V-on-Si hybrid tandem solar cells were investigated. Using a cross sectional transmission electron microscope, an amorphous layer was observed at the interfaces of GaAs/Si junctions that had been fabricated by the surface active bonding method. The amorphous layer vanished after the annealing at 400 °C. We also investigated the effects of the...
The electrical properties of GaAs/Si heterojuctions fabricated by using surface-activated bonding were experimentally investigated. The results of measurements suggested that the heterostructures revealed type-II band lineup.
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