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We have grown polycrystalline GaN on quartz, refractory metal (W, Mo, Ta and Nb) and Si substrates by using plasma-assisted molecular beam epitaxy. It has been found that polycrystalline GaN grown on quartz and refractory metal substrates shows a strong band-edge emission without yellow emission. GaN growth on Si with native oxide produces well c-orientated nanorods exhibiting a low field emission...
We report on a barrier height control on electron field emission characteristics of GaN. It has been found that growing an ultra-thin AlN layer is effective to improve the field emission characteristics, lower threshold electric field and higher emission current density, of polycrystalline GaN on Mo. The Fowler-Nordheim plots of GaN/Mo with and without the ultra-thin AlN layer showed that the growth...
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