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Spin transfer torque magnetic random access memory (STT-MRAM) is recommended as one of the promising candidates for nonvolatile memory technologies. Compared with traditional memory technologies, STT-MRAM demonstrates low power consumption, fast access speed and infinite endurance, while the storage capacity reported so far has not been that large in contrast with SRAM or DRAM. Considering this, multi-level...
Conventional spin-transfer torque random access memory (STT-RAM) is a promising technology due to its non-volatility and dense cell structure. However, the long switching time of magnetic tunneling junction (MTJ) limits the write speed of the STT-RAM. In order to improve the write performance, a Spin-Hall Effect (SHE) assisted STT-RAM structure (SHE-RAM) has recently been proposed [1]. SHE effect...
As the fabrication technology node shrinks down to 90nm or below, high standby power becomes one of the major critical issues for CMOS high-speed computing circuits (e.g. logic and cache memory) due to the high leakage currents. A number of non-volatile storage technologies such as FeRAM, MRAM, PCRAM and RRAM and so on, are under investigation to bring the non-volatility into the logic circuits and...
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