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Nitrogen implantation has been performed to promote the group-III intermixing in InAs quantum dots embedded in InAlGaAs quantum-well laser structure. A differential bandgap shift as large as 112 nm (65 meV) has been observed after nitrogen implantation at 5times1012 ions/cm2, 1500 keV and annealing at 700degC. The intermixing activation is found to occur at a lower temperature than the typical dielectric...
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