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Breakthroughs in cutting‐edge research fields such as hetero‐integration of materials and the development of quantum devices are heavily bound to the control of misfit strain during heteroepitaxy. While remote epitaxy offers one of the most intriguing avenues, demonstrations of functional hybrid heterostructures are hardly possible without a deep understanding of the nucleation and growth kinetics...
The ultimate performance of a solid state device is limited by the restricted number of crystalline substrates that are available for epitaxial growth. As a result, only a small fraction of semiconductors are usable. This study describes a novel concept for a tunable compliant substrate for epitaxy, based on a graphene–porous silicon nanocomposite, which extends the range of available lattice constants...
In article number 1603269, Abderraouf Boucherif, Richard Arès, and co‐workers, propose a novel concept of a tunable compliant substrate for epitaxy. This substrate extends the range of available lattice constants for epitaxial semiconductor alloys. Excellent properties, such as thermal stability up to 900 °C, lattice tuning of at least 0.9% mistmatch, and compliance under stress are demonstrated experimentally...
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