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In this study, we have fabricated vertical SIS tunnel junctions with a-axis oriented YBa 2 Cu 3 O 7-y (YBCO) electrodes. In order to prevent the pinhole in the barrier layer, double layer consists of PrGaO 3 (PGO) and CeO 2 was used. The standard lithography technology and ion milling were employed to define the junctions with area of 3μm x 5 μm. The...
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