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Experimental results on growth morphology in N‐polar GaN grown by low‐pressure metalorganic chemical vapor deposition (LP‐MOCVD) were analyzed using a thermodynamic supersaturation model for gallium. Smooth N‐polar GaN films with 1 nm RMS roughness were always obtained under extremely low Ga supersaturation in the vapor, although the growth conditions were seemingly different. It was found that increasing...
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