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In this paper, the millimeter-wave circuit miniaturization techniques using BCMLR and interdigital resonators are introduced. Using these structures, the physical size of the on-chip filter can be dramatically reduced. The designed BPFs are implemented in standard 0.13-μm SiGe and 0.1-μm GaAs technologies for concept approval. Compared with other state-of-the-art work at millimeter-wave frequencies,...
This paper proposed a novel broadside-coupled meander-line resonator (BCMLR) for millimeter-wave (mm-wave) passive and active circuit designs. This on-chip resonator is designed and fabricated using a 0.13μm SiGe technology. The proposed BCMLR consists of two broadside-coupled meander lines with opposite orientation. Applying this resonator with on-chip capacitors, a compact first-order and a second-order...
This paper studies how boron thermal diffusion in SiGe heterostructure are influenced by different source drain extension high-energy fluorine implant after SiGe thermal process for advanced HKMG SRAM device. Different fluorine profiles may introduce different fluorine concentration along Si/SiGe interface and result in fluorine interstitial cluster at different SiGe positions after SiGe 700°C thermal...
This paper presents highly-efficient RF polar transmitter (TX) systems that utilize the envelope-tacking (ET) technique with monolithic SiGe power amplifiers (PAs) for mobile WiMAX and 3GPP Long Term Evolution (LTE) applications. Monolithic single-ended cascode SiGe PA design capable of enhancing its power-added efficiency (PAE) is demonstrated. Four RF switches are adopted at the bases of the common-emitter...
A graded-bandgap SiGe heterojunction bipolar transistor (HBT) is fabricated using Ge+ implantation. The maximum current gain and the maximum cutoff frequency are 40 and 8 GHz respectively, while those of the Si control device are 100 and 11 GHz. This relatively high cutoff frequency is obtained for the SiGe HBT despite considerable defects in the emitter and base regions, and is attributed to the...
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