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This paper presents a real-time observation on microstructure evolution under electrical programming pulses directly on phase-change memory cells developed with 90-nm technology for the first time. The feasibility of this in-situ TEM experiment was successfully confirmed through the observed memory-switching behavior, and it was found that slow quenching crystallization enhanced the grain growth rather...
To grow smooth and continuous polycrystalline Si (poly-Si) films by aluminum-induced crystallization (AIC), both of the Al and a-Si layer were deposited by dc magnetron sputtering. The size of the poly-Si islands and possibly the grain size of the poly-Si films could be increased with higher deposition rate of the Al layer and thicker aluminum oxide interface layer. As a result, it was possible to...
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