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We demonstrated that the InGaP emitter ledge passivation in InGaP/GaAs heterojunction bipolar transistor (HBT) could suppress the recombination components in I B induced by the extrinsic base surface and the defects activated by the current stress. Similar suppression of I B by the current stress was found in unpassivated HBT with the 2min growth interruption at the base–emitter interface...
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