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A non-stoichiometric silicon oxide film has been deposited by evaporating SiO as a source material in Ar and O 2 mixed gas. The film is composed of SiO and SiO 2 , and has a porous structure. The SiO 2 results from some part of SiO reacting with O 2 and its amount depends on the pressure in the chamber. The residual SiO in the film can be photo-oxidized into SiO ...
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