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This paper reports on the stoichiometry determination of epitaxially grown vanadium monoxide (VO x ) thin films on MgO(100) substrates. The epitaxial growth was confirmed by RHEED, LEED and XRD techniques. The oxygen content of VO x thin films, as a function of oxygen flux, was determined using Rutherford backscattering spectrometry. The 18 O isotope was used for film...
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