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High quality ZnO/Zn 0.9 Mg 0.1 O multiple quantum wells were grown on (111) Si employing epitaxial Lu 2 O 3 buffer layer and a thin ZnO nucleation layer. The linewidth of the low temperature ZnO well emission is only 17 meV. The effective recombination lifetime of emission from ZnO wells is 183 ps. Temperature-dependent photoluminescence is investigated to reveal the...
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