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Cu is commonly used as filling material for TSV in 3D integration [1]. However, there is a problem of thermal mismatch between Cu and Si, and also there is still space for improvement in electrical resistivity. In order to improve the physical properties of TSV electroplating copper, we added high conductivity and low expansion coefficient nanoparticles such as graphene to the copper plating solution...
A novel low temperature wafer-level Cu-Cu bonding method using Ag nanoparticles (NP) was proposed and realized in this paper. A bonding structure consisted of Cu bonding pads, TiW barrier/adhesive layer was firstly fabricated on the silicon wafer. Ag NPs were then deposited by physical vapor deposition (PVD) on Cu pads. The morphology of Ag NPs annealed at different temperature was studied. Bonding...
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