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Pulsed and transient measurements performed in planar nanodiodes fabricated on an AlGaN/GaN heterolayer reveal the influence of surface and bulk traps on the I–V characteristic and AC impedance. Rectangular and V-shape diodes of different lengths and widths have been measured. Surface trapping effects become relevant in narrow channels, as the surface to volume ratio of the device is increased, while...
In modern communication system, both the bandwidth and peak-to-average power ratio of the transmitted signal are increasing rapidly. As a result, the power amplifiers based on linear power amplifiers such as class A, B or AB suffer from very low efficiency. The most promising solutions are the Envelope Tracking (ET) and Envelope Elimination and Restoration (EER) techniques, which can greatly improve...
In this paper we use an electro-thermal method [solver of the heat-flux equation coupled with an ensemble Monte Carlo (MC) simulator] to extract the value of the thermal resistance, Rth, in diodes consisting in un-gated Al0.27Ga0.73N/GaN heterostructures. Different substrates (polycrystalline diamond - PCD, diamond, silicon and sapphire), and die dimensions will be analysed. When a temperature-independent...
In this paper, physical modeling of a GaN HEMT with a field plate structure is proposed, with the objective of providing the connection between the physical design parameters of the device (geometry, Al mole fraction, type of the field plate, etc) and on-resistance together with parasitic capacitances of the device. In this way, it is possible to optimize the design of a switching device for a particular...
In this paper, application of new technological solution for power switches based on Gallium Nitride (GaN) in Envelope Amplifier for Radio Frequency Power Amplifier is proposed. The goal of this application is the efficiency enhancement at high switching frequency, due to superior conductivity and switching characteristics of enhancement mode GaN FETs over Si devices. Experimental results provided...
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