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A study of 4H-SiC annealing temperature was performed using a rf-induction furnace in order to determined the optimal conditions to obtain suitable graphene layers. The graphene layer has been identified and confirmed by electrical measurements and physico-chemical analyses using Atomic Force Microscopy, X-Ray Photoelectron Spectroscopy and Infra-Red reflection measurements. GFET (Graphene Field-Effect...
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