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This paper details the creation of 3-dimensional (3-D) microstructures in 4H-silicon carbide (4H-SiC) substrates with a plasma etch process that utilizes multilayer etch masks. An inductively coupled plasma (ICP) etch process (SF6/O2) for SiC was developed and etch rates as high as ∼1 µm/min, a selectivity of 60∶1 (SiC to Ni), and aspect ratio dependent etch characteristics were demonstrated. In addition,...
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