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Uncapped InAs/GaAs quantum dots with an average height of 14nm were obtained combining a low growth rate (0.01ML/s) and a high substrate temperature (520°C) during molecular beam epitaxy of InAs on GaAs(001). This achievement of a very narrow distribution (∼3%) of large coherent islands was made possible by the suppression of the nucleation of relaxed structures. When GaAs-capped, such quantum dots...
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