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A GaInAsP-InP 1.5 mu m band travelling-wave optical amplifiers (TWAs) with antireflection coated window facet structure have been developed. 0.07% average facet reflectivity and 20 dB signal gain with 1 dB spectral gain ripple was achieved. As low as 3*10/sup -5/ reflectivity was estimated for the window facet.<<ETX>>
1.5 mu m band travelling-wave semiconductor optical amplifiers (TWAs), characterised by their window facet structure and symmetrised active waveguide, have been developed. 1.5 dB spectral gain ripple and 1.3 dB TE-TM mode gain difference at 22 dB signal gain were achieved simultaneously. An average facet reflectivity as low as 0.06% was estimated.<<ETX>>
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