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We report the first demonstration of Ge gate-all-around (GAA) nanowire (NW) p-FETs integrated with a contractible liner stressor. High performance GAA NW p-FET featuring the smallest wire width WNW of ∼3.5 nm was fabricated. Peak intrinsic transconductance Gm of 581 μS/μm and SS of 125 mV/dec. were demonstrated. When the Ge NW p-FETs were integrated with the phase change material Ge2Sb2Te5 (GST) as...
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