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The correlation between the In(Ga)As quantum rings (QRs) and their precursors InAs quantum dots (QDs) are studied by changing the annealing time after the deposition of a thin InAs layer on GaAs. The atomic force microscopy and photoluminescence (PL) are used to characterize the morphologies and electronic states of QDs and QRs. The longer annealing time tends to enlarge the QD size to high aspect...
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