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Parallel angle resolved X-ray photoelectron spectroscopy (ARXPS) was used to study the oxidation of W and WSi x thin films CVD-deposited on 12in. silicon wafers. The thin films were exposed to air during defined periods of time. Immediately after layer deposition, the wafers were rapidly loaded in a vacuum carrier in order to measure various aspects of the oxidation kinetic by XPS. Angle resolved...
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