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In order to apply two-dimensional electron-gas-field-effect-transistors (2DEG-FETs) for cell-viability sensors, we investigated the chemical/electrical properties of TiO 2 thin films (13–17nm) prepared with the sol–gel technique on the gate surface of AlGaAs/GaAs 2DEG-FETs. Photochemical/electrochemical reactions on GaAs surface in electrolytes, which induce the degradation of 2DEG-FET performance,...
In order to apply two-dimensional electron-gas field effect transistors (2DEG-FETs) for bio-sensing devices operating in electrolytes, the chemical/electrical properties of TiO 2 thin film is investigated as a material for the gate oxide of FETs. TiO 2 films of thickness 13–15nm are prepared with sol–gel technique on the gate surfaces of AlGaAs/GaAs 2DEG-FETs, followed by heat treatment...
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