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The wreckage of mechanical elements caused by the wear has been thought as an important problem for the mechanical engineers. Hence, it is necessary to improve the material properties of mechanical elements for the purpose of wear resistance. Moreover, low friction always plays an important role for saving energy. The technologies of materials science and surface engineering have been used widely...
In this letter, the special role of hydrogen ions in hafnium doped silicon oxide resistive random access memory (RRAM) is presented. In addition to the more typical oxygen ion-dominated resistive switching, hydrogen ions were also observed to trigger a resistance transformation phenomenon, producing a tri-resistive device. Unlike a normal RRAM device, a hydrogen plasma-treated device is operated with...
As the demands of functionality and performance for electronic products increase, three-dimensional chip stacking with high-density I/O has received much attention. For high density interconnections packaging, solder micro bumps are adopted extensively. However, its process temperature is high during chip stacking process. High bonding temperature would be easy to lead chip damage and chip warpage...
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