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The electromigration test of the microbump interconnects with Cu/Cu6Sn5/Cu structure is reported in this study. This Cu6Sn5 intermetallic compound layer was single-crystal like. The diameter of the microbumps in die-to-die stacking was 30 µm. Test vehicles were applied by a current density of 2.2×105 A/cm2 and settled on a hotplate at 150°C. The resistances of the microbumps were simultaneously monitored...
Recent developments of nanofabrication have enabled the miniaturization of electronic devices, allowing more electronic devices to be combined into a single device with a high performance. However, the complex devices have led to the escalation of power dissipation as well as the increasing heat flux at the interface between devices. Electronic devices were damaged by much heat accumulation, since...
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