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The crystallization of a-Si films, grown by low-pressure chemical vapor deposition and annealed by rapid thermal annealing (RTA), at 850 °C in conjunction with conventional heating at 600 °C for 6 h, has been studied using transmission electron microscopy. The results of RTA at 850 °C showed that the improvement of the poly-Si structure (large crystallites with low density of microtwins) was maximized...
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