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4H-SiC bipolar Darlington transistors with a record-high current gain have been demonstrated. The dc forced current gain was measured up to 336 at 200 W/cm2 ( JC = 35 A/cm2 at VCE = 5.7 V) at room temperature. The current gain exhibits a negative temperature coefficient and remains as high as 135 at 200degC. The specific on-resistance is 140 mOmegamiddotcm2 at room temperature and increases at elevated...
Degradation in both current gain and specific on-resistance of fabricated 4H-SiC BJTs have been observed after a short period of operation. In this paper, 1200 V BJTs were stressed and factors that cause the degradation are proposed. The degradation may be attributed to the increase of the surface states density along the SiC/SiO2 interface, which results in an increased surface recombination current...
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