The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Industrial bifacial n‐type front and back contact (nFAB) silicon solar cells, consisting of a boron‐doped p+ emitter and a phosphorus‐doped n+ back surface field (BSF), are known to give good bifaciality, high and stabilized efficiency. One possible approach to further enhance the cell efficiency is to convert conventional passivated emitter and rear totally diffused (PERT) into rear locally diffused...
Industrial bifacial n‐type front‐and‐back contact (nFAB) solar cells consist of a boron‐doped p+ emitter and a phosphorus‐doped n+ back surface field (BSF). A conventional BSF formation method with tube‐based POCl3 diffusion typically requires the use of a masking layer to protect the front emitter against cross doping or two wet‐chemical etching steps. Herein, two alternative mask‐free BSF formation...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.