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Amorphous (a-)Ge films deposited on air-cleaved CaF 2 (111) substrates were irradiated with 1.8 MeV Si ions, and the microstructure of the irradiated Ge films was examined by using Rutherford backscattering spectrometry combined with channeling technique, X-ray diffraction measurement and transmission electron microscopy. It was found that the ion irradiation can induce solid phase epitaxial...
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