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We have used scanning tunneling microscopy (STM) and ab initio total-energy calculations to characterize surface and interfacial structure of Co-Si(111) system. It has been found experimentally that two different types of the (2×2) surface structures occur. The coexistence of two phases is demonstrated by the example of STM image of the surface formed at the early stages of cobalt silicide formation...
We report scanning tunneling microscopy observations of solid-phase epitaxial growth of ultra-thin CoSi2 and CoSi films at heating temperatures in the range of 350–600°C using a disordered ‘(1×1)’ phase of Co/Si(111) as a pre-existing template. It is found that depending on the growth conditions two types of epitaxial cobalt silicide films can be formed. At coverages below ~2 ML (1 ML=7.83×1014atoms/cm...
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