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In this paper, the charge collection and parasitic bipolar effect of SOI NMOS devices in case of different ion strike locations have been analyzed through 3D simulation. The simulation results show that the strike at drain region can cause charge collection comparable with the collection induced by strike at the gate region above body. Single event upset (SEU) simulations of SRAM cell have been conducted...
The 3D simulation result shows how the heavy ion strike location, the structure (with or without body contact) of the device, and the energy of strike ion affect the parasitic bipolar gain. Short distance between strike location and body contact reduces the charge collection by drain more obviously than that in the case of longer distance. The highlight of the paper lies in the discovery and analysis...
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